In-Depth Profile of Hf-Based Gate Insulator Films on Si Substrates Studied by Angle-Resolved Photoelectron Spectroscopy Using Synchrotron Radiation
نویسندگان
چکیده
S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan Core Research for Evolutional Science and Technology, JST, Bunkyo-ku, Tokyo, 113-8656, Japan Univ-of-Tokyo Synchrotron Radiation Research Organization, Bunkyo-ku, Tokyo 113-8656, Japan Semiconductor Technology Academic Research Center, Kohoku-ku, Kanagawa 222-0033, Japan [email protected]
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